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ESD phenomena in graded junction devices 
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Duvvury, C., Rountree, R.N., Stiegler, H.J., Polgreen, T., Corum, D. 1989 [No source information available] 8
Physical limitations of molecular electronic devices 
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Marvan, M. 1989 Vacuum 39 (1), pp. 29 0
Recent developments in real time structured analysis 
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Kennedy, A.S. 1989 Computer Physics Communications 57 (1-3), pp. 561 0
Investigation of the time dependence of current degradation in MOS devices 
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Rakkhit, R., Peckerar, M.C., Yao, C.T. 1989 [No source information available] 1
4 PMOS/2 NMOS vertically stacked CMOS-SRAM with 0.6 μm design rule 
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Inoue, Y., Ipposhi, T., Wada, T., Ichinose, K., Nishimura, T., Akasaka, Y. 1989 Digest of Technical Papers - Symposium on VLSI Technology , pp. 39-40 0
Electromigration of ionized cluster beam deposited aluminum metallizations 
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Hummel, R.E. 1989 [No source information available] 0
Novel stacked capacitor cell for 64 Mb DRAM 
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Wakamiya, W., Tanaka, Y., Kimura, H., Miyatake, H., Satoh, S. 1989 Digest of Technical Papers - Symposium on VLSI Technology , pp. 69-70 4
Reliability study of Au-Sn eutectic bonding with GaAs dice 
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Matijasevic, Goran S., Lee, Chin C. 1989 [No source information available] 4
Electromigration interconnect lifetime under AC and pulse DC stress 
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Liew, B.K., Cheung, N.W., Hu, C. 1989 [No source information available] 7
Trends in the future: data acquisition architectures 
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Gaines, I. 1989 Computer Physics Communications 57 (1-3), pp. 560 0
Dopant redistribution in dual gate W-polycide CMOS and its improvement by RTA 
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Hayashida, H., Toyoshima, Y., Suizu, Y., Mitsuhashi, K., Iwai, H., Maeguchi, K. 1989 Digest of Technical Papers - Symposium on VLSI Technology , pp. 29-30 5
Integrated optoelectronics-VLSI packaging technology 
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Lin-Hendel, C.G., Bertram, W.J., Dhanaliwala, M.S., Pimpinella, R.J., Segelken, J.M., Tai, K.L. 1989 Digest of Technical Papers - Symposium on VLSI Technology , pp. 43-44 0
New reliability problem associated with Ar ion sputter cleaning of interconnect vias 
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Tomioka, Hideki, Tanabe, Shin-ichi, Mizukami, Koichiro 1989 [No source information available] 1
Physical aspects of charged particle track structure 
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Ritchie, R.H., Hamm, R.N., Turner, J.E., Wright, H.A., Ashley, J.C., Basbas, G.J. 1989 Nuclear tracks 16 (2-3), pp. 141-155 15
Study of boron penetration through thin oxide with p+-polysilicon gate 
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Sun, J.Y.-C., Wong, C., Taur, Y., Hsu, C.-H. 1989 Digest of Technical Papers - Symposium on VLSI Technology , pp. 17-18 9
New technology for bipolar emitters in the deep sub-micron range 
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Burghartz, Joachim N., Ginsberg, Barry J., Mader, Siegfried R. 1989 Digest of Technical Papers - Symposium on VLSI Technology , pp. 57-58 0
Verification of the SIMULATE-3 pin power distribution calculation 
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DiGiovine, A.S., Gorski, J.P., Tremblay, M.A. 1989 Nuclear Science and Engineering 103 (4), pp. 420-426 0
Optimum fuel and power distribution for a pressurized water reactor burnup cycle 
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Stillman, J.A., Chao, Y.A., Downar, T.J. 1989 Nuclear Science and Engineering 103 (4), pp. 321-333 6
Stress-driven diffusive voiding of aluminum conductor lines 
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Yost, F.G., Amos, D.E., Romig Jr., A.D. 1989 [No source information available] 9
Proceedings of the International Conference on Computing in High Energy Physics 
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[No author name available] 1989 Computer Physics Communications 57 (1-3) 0
 
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